ESCAPEE European Silicon Carbide Research

WORK PACKAGES

• WP1 Project Management
• WP2 Thick Epitaxial Growth
• WP3 Ion Implantation and Activation
• WP4 Oxide Growth
• WP5 Contact Formation
• WP6 Surface Preparation and Etching
• WP7 Schottky Diode Fabrication
• WP8 MOSFET Fabrication
• WP9 Device Characterisation
• WP10 Packaging
• WP11 3.3kV Inverter Demonstrator

Work Package Leader: Dynex

• Developed novel TO257-style discrete package with DBC baseplate for aerospace applications (Semelab).
• Designed and built 1200V hybrid SiC diode/Si IGBT module. (Semelab).
• Designed and built hybrid SiC diode/Si IGBT module with 10kV isolation capability for high-power applications (Dynex).