ESCAPEE European Silicon Carbide Research

WORK PACKAGES

• WP1 Project Management
• WP2 Thick Epitaxial Growth
• WP3 Ion Implantation and Activation
• WP4 Oxide Growth
• WP5 Contact Formation
• WP6 Surface Preparation and Etching
• WP7 Schottky Diode Fabrication
• WP8 MOSFET Fabrication
• WP9 Device Characterisation
• WP10 Packaging
• WP11 3.3kV Inverter Demonstrator

Work Package Leader: CNM

• Designed and fabricated prototype SiC power MOSFETs (CNM).