Silicon carbide (SiC) offers huge advantages in electronics due to its exceptional material properties. Silicon carbide devices will be tens of times smaller and lighter than their silicon equivalents, reducing the size and weight of electronics in hybrid electric vehicles and space and aerospace applications. Silicon carbide electronics will dramatically increase energy efficiency and decrease environmental pollution. The research will focus specifically on novel Metal Oxide Semiconductor (MOS), IGBT and diode devices up to 1.2kV, for applications in hybrid vehicles and portable power supplies. A new fabrication process is proposed to increase the channel mobility in MOS devices, based on silicon / silicon carbide heterojunction technology. New commercial silicon carbide surface polishing techniques will be used to radically improve the performance and yield of Schottky diodes.